Optimization of Geometrical Parameters of Gate-all-around Tunnel FET for Analog RF Applications
Kalaivani. P1, M. Usharani2
1Kalaivani.P, Department of Electronics and Communication Engineering, Velammal Engineering College, Chennai, India.
2M.Usharani, Department of Electronics and Communication Engineering, Velammal Engineering College, Chennai, India.
Manuscript received on May 29 , 2013. | Revised Manuscript Received on June 01, 2013. | Manuscript published on June 20, 2013. | PP: 9-12 | Volume-1, Issue-7, June 2013. | Retrieval Number: G0236061713/2013©BEIESP
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© The Authors. Published By: Blue Eyes Intelligence Engineering & Sciences Publication (BEIESP). This is an open access article under the CC BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/4.0/)
Abstract: This paper presents the gate oxide thickness, gate oxide material, gate material and gate contact alignment variation impact on on-current, off-current, subthreshold swing, RF and stability performance of Gate-all-around Tunnel FET. The RF figures of Merit (FoM) such as cut-off frequency (ft ) and maximum oscillation frequency (fmax) along with Stability factor (K) and dc parameters are calculated for different gate oxide thickness, gate oxide material, gate material and gate contact alignment. One parameter is varied at a time to show the resulting fluctuations in the device characteristics. The process variations show significant changes in the device performance and provide information about acceptable variations and design guidelines for GAA-TFET.
Keywords: Gate-all-around Tunnel FET, Band-to-band Tunneling, Radio Frequency (RF), Technology Computer Aided Design (TCAD).